1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
BC859/860
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
For Complementary with NPN Type BC849/850
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification A:125 250, B:220 475
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
BC859
V
CBO
-30
V
BC860
-50
Collector-Emitter
Voltage
BC859
V
CEO
-30
V
BC860
-45
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
BC859A
BC859B
BC860A
BC860B
MARK
4A
4B
4E
4G
P
C
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
MARK SPEC
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter
Breakdown Voltage
BC859
V
(BR)CEO
I
C
=-10mA, I
B
=0
-30
-
-
V
BC860
-45
-
-
Collector-Base
Breakdown Voltage
BC859
V
(BR)CBO
I
C
=-10 A, I
E
=0
-30
-
-
V
BC860
-50
-
-
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=-30V, I
E
=0
-
-
-15
nA
DC Current Gain
h
FE
I
C
=-2mA, V
CE
=-5V
125
-
475
Base-Emitter Voltage
V
BE(ON)
1
I
C
=-2mA, V
CE
=-5V
-0.6
-0.65
-0.75
V
V
BE(ON)
2
I
C
=-10mA, V
CE
=-5V
-
-
-0.82
Collector-Emitter Saturation Voltage
V
CE(sat)
1
I
C
=-10mA, I
B
=-0.5mA
-
-0.075
-0.3
V
V
CE(sat)
2
I
C
=-100mA, I
B
=-5mA
-
-0.25
-0.65
Base-Emitter Saturation Voltage
V
BE(sat)
1
I
C
=-10mA, I
B
=-0.5mA
-
-0.7
-
V
V
BE(sat)
2
I
C
=-100mA, I
B
=-5mA
-
-0.85
-
Transition Frequency
f
T
I
C
=-10mA, V
CE
=-5V, f=100MHz
-
150
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4.5
-
pF
Noise Figure
NF
I
C
=-200 A, V
CE
=-5V
Rg=10k , f=1kHz
-
-
4.0
dB
Type Name
Marking
Lot No.
1998. 6. 15
2/2
BC859/860
Revision No : 2
C
COLLECTOR CURRENT I (mA)
0
COLLECTOR CURRENT I (mA)
C
-0.1
-0.2
BASE-EMITTER VOLTAGE V (V)
BE
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
I - V
COLLECTOR-BASE VOLTAGE V (V)
CAPACITANCE C (pF)
ob
10
1
-1
-3
20
CB
-10
-30
C - V
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
-0.1
-0.3
FE
-1
-3
C
h - I
-4
-8
-12
-16
-20
-10
-20
-30
-40
-50
I =-400
A
B
I =-350
A
B
I =-50
A
B
I =-100
A
B
I =-150
A
B
I =-200
A
B
I =-250
A
B
I =-300
A
B
C
BE
-0.4
-0.6
-0.8
-1.0
-0.3
-0.5
-1
-3
-5
-10
-30
-50
-100
V =-5V
CE
FE
C
-10
-30
-100
10
30
50
100
300
500
1k
SATURATION VOLTAGE
-1
COLLECTOR CURRENT I (mA)
-0.1
-0.01
-0.03
-0.1
-0.3
-30
-3
-10
C
-100
BE(sat)
-0.3
-1
V , V - I
BE(sat)
C
CE(sat)
V , V (V)
CE(sat)
-3
-10
I /I =20
C
B
V
BE(sat)
V
CE(sat)
ob
CB
-100
-200
3
5
f=1MHz
I =0
E
V =-5V
CE
PDF 
ZIP